Electronic grade diiodosilane with ultra-high purity and low impurities. It features high activity of Si-I bonds, stable decomposition at low temperature, controllable silicon deposition rate and dense pinhole-free films. Iodine byproducts can be easily purged, compatible with ultra-low temperature ALD/CVD processes.
Electronic Grade Diiodosilane
CAS # : 13760-02-6
Synonym : DIS
Technical specs :
Purity, By GC: ≥99.8%; Specification, By ICP-MS: ≥99.9999995%; TMI ≤5ppb
Industry/application :
Applied in ultra-thin silicon-based film deposition for next-generation advanced logic and memory chips, passivation layers of MEMS microdevices and epitaxial thin films of third-generation semiconductors, compatible with high-end semiconductor processes sensitive to chlorine.
Certifications :
ISO,COA,MSDS,TDS