Electronic grade tetraethyl orthosilicate (TEOS) with ultra-high purity of 8N+, ppb-level metal impurities, mild hydrolysis without corrosive HCl by-products, flat and dense formed films with excellent insulation and breakdown resistance, compatible with all types of semiconductor CVD processes.
Electronic Grade Tetraethyl Orthosilicate
CAS # : 78-10-4
Synonym : TEOS
Technical specs :
Purity, By GC: ≥99.99%; Specification, By ICP-MS: ≥99.9999999%; TMI ≤1ppb
Industry/application :
Silicon oxide precursor for IC shallow trench isolation (STI), interlayer dielectric (ILD) and advanced 3D NAND packaging; also used for MEMS, power devices and optical coatings.
Certifications :
ISO,COA,MSDS,TDS