Electronic grade high-purity silicon-nitrogen precursor trisilylamine, halogen-free with balanced activity of Si-N bonds. It can simultaneously supply silicon and nitrogen sources at low temperature to form uniform and dense silicon nitride films with ultra-low residual impurities, suitable for mass production of high-k and passivation layers.
Electronic Grade Trisilylamine
CAS # : 13862-16-3
Synonym : TSA
Technical specs :
Purity, By GC: ≥99.9%; Specification, By ICP-MS: ≥99.9999995%; TMI ≤5ppb
Industry/application :
ALD deposition of silicon nitride passivation layers for advanced memory chips, power semiconductors and OLED display panels. It does not require additional nitrogen sources to simplify film preparation, applied for device moisture resistance, insulation and stress buffer layers.
Certifications :
ISO,COA,MSDS,TDS